
Ferroelectric Memory Company (FMC) is a fabless semiconductor and memory systems company commercializing a hybrid memory technology that adds persistence to DRAM and Cache for disruptive performance…

Ferroelectric Memory Company (FMC) is a fabless semiconductor and memory systems company commercializing a hybrid memory technology that adds persistence to DRAM and Cache for disruptive performance…
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Role Overview We are looking for an experienced IC Design Engineer with strong expertise in CMOS analog/mixed‑signal design and emerging NVM devices to help develop FMC’s next‑generation ferroelectric memory products based on hafnium oxide technology. You will work in close collaboration with international teams in Milan or Dresden to turn innovative memory concepts into robust silicon.
Must Have CMOS IC design (Analog/Mixed Signal), NVM Device Design, Design tools: Cadence, Verilog, Programming Ability: C, Verilog, Digital Design Concepts
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About Us Ferroelectric Memory GmbH (FMC) is a pioneering semiconductor company based in Dresden, Germany, focused on next-generation non-volatile memory technology.
Founded in 2016, FMC is at the forefront of innovation in ferroelectric memory, enabling faster, more energy-efficient, and scalable solutions for future computing systems.
Our team combines deep expertise in semiconductor physics, device engineering, and system design to redefine memory architectures for emerging applications in AI, IoT, and high-performance computing.
Join us and be part of a team shaping the future of memory technology.
Why FMC?